Items where Author is "Mohamed, Mohd Ambri "

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Number of items: 28.

Article

Sirat, Mohamad Shukri and Johari, Muhammad Hilmi and Mohmad, Abdul Rahman and Mohammad Haniff, Muhammad Aniq Shazni and Ani, Mohd Hanafi and Mat Hussin, Mohd Rofei and Mohamed, Mohd Ambri (2022) Direct growth and properties of few-layer MoS2 on multilayer graphene prepared by chemical vapor deposition. Journal of Materials Science. ISSN 0022-2461 E-ISSN 1573-4803

Seman, R. N. A. R and Azam, Mohd Asyadi and Mohamed, Mohd Ambri and Ani, Mohd Hanafi (2022) Effect of Polytetrafluoroethylene binder content on gravimetric capacitance and life cycle stability of graphene supercapacitor. International Journal of Automotive and Mechanical Engineering (IJAME), 19 (3). pp. 9964-9970. ISSN 2229-8649 E-ISSN 2180-1606

Sirat, Mohamad Shukri and Johari, Muhammad Hilmi and Mohmad, Abdul Rahman and Mohammad Haniff, Muhammad Aniq Shazni and Ani, Mohd Hanafi and Syono, Mohd Ismahadi and Mohamed, Mohd Ambri (2022) Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition. Thin Solid Films, 744. pp. 1-8. ISSN 0040-6090

Ismail, Edhuan and Fauzi, Fatin Bazilah and Mohamed, Mohd Ambri and Mohd Yasin, Mohd Fairus and Mohd Abid, Mohd Asyadi Azam and Yaacob, Iskandar Idris and Md Din, Muhamad Faiz and Ani, Mohd Hanafi (2019) Kinetic studies of few-layer graphene grown by flame deposition from the perspective of gas composition and temperature. RSC Advances, 9 (36). pp. 21000-21008. ISSN 2046-2069

Fauzi, Fatin Bazilah and Ismail, Edhuan and Syed Abu Bakar, Syed Noh and Ismail, Ahmad Faris and Mohamed, Mohd Ambri and Md Din, Muhammad Faiz and Illias, Suhaimi and Ani, Mohd Hanafi (2019) The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition. Physical Chemistry Chemical Physics, 22 (6). pp. 3481-3489. ISSN 1463-9076 E-ISSN 1463-9084

Fauzi, Fatin Bazilah and Ismail, Edhuan and Ani, Mohd Hanafi and Syed Abu Bakar, Syed Noh and Mohamed, Mohd Ambri and Majlis, Burhanuddin Yeop and Md Din, Muhammad Faiz and Mohd Abid, Mohd Asyadi Azam (2018) A critical review of the effects of fluid dynamics on graphene growth in atmospheric pressure chemical vapor deposition. Journal of Materials Research, 33 (9). pp. 1088-1108. ISSN 0884-2914 E-ISSN 2044-5326

Ani, Mohd Hanafi and Kamarudin, Mohd Syahidan and Ramlan, A H and Ismail, Edhuan and Sirat, Mohd Shukri and Mohamed, Mohd Ambri and Mohd Abid, Mohd Asyadi Azam (2018) A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene. Journal of Materials Science, 53 (10). pp. 7095-7111. ISSN 0022-2461 E-ISSN 1573-4803

Mohd Abid, Mohd Asyadi Azam and Raja Seman, Raja Noor Amalina and Zulkifli, Mohd Fadzil and Mohamed, Mohd Ambri and Ani, Mohd Hanafi (2018) Carbon nanomaterials derived from Malaysia’s highway road asphalt waste as electrode for supercapacitor. Journal of Materials and Environmental Sciences, 9 (7). pp. 2164-2168. ISSN 2028-2508

Mohd Abid, Mohd Asyadi Azam and Zulkapli, Nor Najihah and Dorah, Norasimah and Raja Seman, Raja Noor Amalina and Ani, Mohd Hanafi and Sirat, Mohd Shukri and Ismail, Edhuan and Fauzi, Fatin Bazilah and Mohamed, Mohd Ambri and Majlis, Burhanuddin Yeop (2017) Review—Critical considerations of high quality graphene synthesized by plasma-enhanced chemical vapor deposition for electronic and energy storage devices. ECS Journal of Solid State Science and Technology, 6 (6). M3035-M3048. ISSN 2162-8769 E-ISSN 2162-8777

Lutpi, Husniyah Aliyah and Anuar, Hazleen and Mohamed, Mohd Ambri and Mohd. Salit, Sapuan (2016) Potential of irradiated high density polyethylene/ethylene propylene rubber-carbon nanotube nanocomposite as shoe sole. Proceedings of the Institution of Mechanical Engineers, Part P: Journal of Sports Engineering and Technology, 230 (2). pp. 100-110. ISSN 1754-3371

Fauzi, Fatin Bazilah and Othman, Raihan and Mohamed, Mohd Ambri and Herman, Sukreen Hana and Ahmad Azhar, Ahmad Zahirani and Ani, Mohd Hanafi (2015) Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method. Materials Transactions, 56 (8). pp. 1302-1306. ISSN 1347-5320 (O), 1345-9678 (P)

Mohamed, Mohd Ambri and Otsuka, Nobuo and Pham, Tien Lam (2013) Transition of electron transport process in Be-doped low-temperature-grown GaAs layer. Journal of Applied Physics, 114 (083716). pp. 1-4. ISSN 0021-8979

Mohamed, Mohd Ambri and Pham, Tien Lam and N., Otsuka (2013) Non-equilibrium critical point in Be-doped low-temperature-grown GaAs. Journal of Applied Physics, 113 (5). 053504 (1)-053504 (7). ISSN 0021-8979

Mohamed, Mohd Ambri and Lam, Pham Tien and Otsuka, N. (2013) Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Journal of Crystal Growth, 378. pp. 329-332. ISSN 0022-0248 (In Press)

Cuong, Nguyen Tien and Mohamed, Mohd Ambri and Otsuka, Nobuo and Chi, Dam Hieu (2012) Reconstruction and electronic properties of interface between carbon nanotubes and ferromagnetic co electrodes. Applied Mechanics and Materials, 229-31. pp. 183-187. ISSN 1660-9336

Mohamed, Mohd Ambri and Tien Lam, Pham and Bae, K. W. and Otsuka, Nobuo (2011) Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers. Journal of Applied Physics, 110 (12). ISSN 0021-8979

Bae, K. W. and Mohamed, Mohd Ambri and Jung, DaeWon and Otsuka, Nobuo (2011) Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers. Journal of Applied Physics, 109 (7). ISSN 0021-8979

Mohamed, Mohd Ambri and Inami, Nobuhito and Shikoh, Eiji and Yamamoto, Yoshiyuki and Hori, Hidenobu and Fujiwara, Akihiko (2008) Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes. Science and Technology of Advanced Materials, 9 (2). ISSN 1468-6996

Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2008) Device characteristics of carbon nanotube transistor fabricated by direct growth method. Applied Physics Letters, 92 (24). ISSN 0003-6951

Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2007) Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method. Science and Technology of Advanced Materials, 8 (4). pp. 292-295. ISSN 1468-6996

Proceeding Paper

Che Mohd Noh, Mohd Ihsan and Mohamed, Mohd Ambri and Ismail, Ahmad Ghadafi and Ani, Mohd Hanafi and Majlis, Burhanuddin Yeop (2019) Improvement of gas barrier properties of Polyethylene Terephtalate (PET) by Graphene Nanoplatelets (GNP). In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur.

Fauzi, Fatin Bazilah and Ismail, Edhuan and Osman, Muhammad Naqib and Rosli, Muhammad Suffian and Ismail, Ahmad Faris and Mohamed, Mohd Ambri and Syed Abu Bakar, Syed Noh and Ani, Mohd Hanafi (2019) Influence of mixed convection in atmospheric pressure chemical vapor deposition of graphene growth. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur.

Sirat, Mohd Shukri and Ismail, Edhuan and Ramlan, Amir Hakimi and Fauzi, Fatin Bazilah and Yaacob, Iskandar Idris and Mohamed, Mohd Ambri and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2019) Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur.

Fauzi, Fatin Bazilah and Ani, Mohd Hanafi and Herman, Sukreen Hana and Mohamed, Mohd Ambri (2018) Dilute electrodeposition of TiO2 and ZnO thin film memristors on Cu substrate. In: 6th International Conference on Electronic Devices, Systems and Applications 2017 (ICEDSA 2017), 8-9 August 2017, Kuching, Sarawak, Malaysia.

Fauzi, Fatin Bazilah and Ani, Mohd Hanafi and Othman, Raihan and Ahmad Azhar, Ahmad Zahirani and Mohamed, Mohd Ambri and Herman, Sukreen Hana (2015) Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method. In: 4th International Conference on Electronic Devices, Systems and Applications 2015 (ICEDSA), 14th - 15th December 2014, Kuala Lumpur.

Ani, Mohd Hanafi and Muhamad Ali, Abu Hanifah and Mohamed, Mohd Ambri (2014) Channel length effect on the saturation current and the threshold voltages of CNTFET. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia.

Mohamed, Mohd Ambri and Majlis, Yeop Burhanuddin and Ani, Mohd Hanafi (2014) Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia.

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