Items where Author is "Ahmad Fauzi, Dhiyauddin"

Article

Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826

Abubakkar, Sheik Fareed Ookar and Za'bah, Nor Farahidah and Abdullah, Yusof and Ahmad Fauzi, Dhiyauddin and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2017) Effects of electron radiation on commercial power MOSFET with buck converter application. Journal of Nuclear Science and Techniques, 28 (3). pp. 1-5. ISSN 1001-8042 E-ISSN 2210-3147

Ahmad Fauzi, Dhiyauddin and Alang Rashid, Nahrul Khair and Mohamed Zin, Muhammad Rawi and Hasbullah, Nurul Fadzlin (2017) Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation. IIUM Engineering Journal, 18 (1). pp. 101-109. ISSN 1511-788X E-ISSN 2289-7860

Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohamed Zin, Mohamed Rawi and Hasbullah, Nurul Fadzlin and Sheik Fareed, O A (2013) Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation. IOP Conference Series: Materials Science and Engineering, 23. 012029(1)-012029(8). ISSN 1757-8981

Proceeding Paper

Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and ., Md. Rashid and Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Mohamed Zin, muhammad Rawi (2013) Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures. In: 2013 IEEE 4th International Conference on Photonics (ICP), 28th-30th Oct. 2013, Equatorial Hotel, Melaka.

Monograph

Hasbullah, Nurul Fadzlin and Ahmad Fauzi, Dhiyauddin (2014) Investigation of Current Leakage Mechanisms on InAs Nanoisland Diodes for Radiation Hardness. Project Report. UNSPECIFIED. (Unpublished)